IPBE65R050CFD7AATMA1
Infineon Technologies
Deutsch
Artikelnummer: | IPBE65R050CFD7AATMA1 |
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Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | MOSFET N-CH 650V 45A TO263-7 |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $13.87 |
10+ | $12.743 |
100+ | $10.7619 |
500+ | $9.5735 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 4.5V @ 1.24mA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO263-7-3-10 |
Serie | Automotive, AEC-Q101, CoolMOS™ CFD7A |
Rds On (Max) @ Id, Vgs | 50mOhm @ 24.8A, 10V |
Verlustleistung (max) | 227W (Tc) |
Verpackung / Gehäuse | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Paket | Tape & Reel (TR) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 4975 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 650 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 45A (Tc) |
Grundproduktnummer | IPBE65 |
CONN HDR 4POS 0.165 TIN PCB
CONN RCPT HSG 8POS 4.20MM
IPBH6N03LAG VB
CONN RCPT HSG 30POS 4.20MM
AUTOMOTIVE PG-TO263-7
MOSFET N-CH 650V 14A TO263-7
MOSFET N-CH 650V 24A TO263-7
MOSFET N-CH 25V 50A TO263-3
CONN RCPT HSG 20POS 4.20MM
CONN RCPT HSG 16POS 4.20MM
CONN RCPT HSG 24POS 4.20MM
MOSFET N-CH 650V 32A TO263-7
MOSFET N-CH 650V 11A TO263-7
CONN RCPT HSG 30POS 4.20MM
CONN RCPT HSG 10POS 4.20MM
CONN RCPT HSG 14POS 4.20MM
CONN RCPT HSG 16POS 4.20MM
MOSFET N-CH 25V 50A TO263-3
CONN RCPT HSG 20POS 4.20MM
AUTOMOTIVE_COOLMOS PG-TO263-7
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() IPBE65R050CFD7AATMA1Infineon Technologies |
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